徐现刚，男，山东泰安人，1965年1月生，教授，博士生导师。

1992年获得山东大学凝聚态物理博士学位，师从于蒋民华院士。2000年留美回国-至今，获教育部长江计划的特聘教授，2000年度国家杰出青年科学基金获得者，973首席科学家，主要从事半导体材料、纳米材料及其器件应用的研究工作。 

自1989年至今一直从事MOCVD化合物半导体薄膜材料（包括As，P，Sb和氮化物）的生长及器件应用工作，制备出多种量子异质结构材料如量子阱、超晶格、2DEG，多种薄膜材料如AlGaAs、AlGaInP、InGaAsP、AlInGaN、GaAsSb、InGaSb等，应用到多种半导体器件如：半导体激光器、发光二极管、HBT、HEMT等。自2000年开始SiC单晶生长和加工工作，先后突破了2-6英寸6H-SiC、4H-SiC等的单晶生长技术，解决了超硬SiC单晶衬底的加工难题，制备出基于SiC衬底的GaN超高亮度发光二极管。先后承担了多项863计划、973计划、国家重大专项等课题。 近期又开展了纳米材料的制备及其应用研究。

获得多项表彰和奖励，如1995年洪堡学者，1998年获得由IEE颁发的Electronics Letters Premium，1999年在美国获得由IEEE颁发的Best Paper Award，2000年获得“国家杰出青年基金”，2003年“山东省科技进步一等奖”、“山东省留学回国创业奖”，2005年获“山东省十大杰出青年”，2007年获“政府特殊津贴奖”，2014年获得“山东省技术发明一等奖”等。任国务院学位委员会委员、国家863计划半导体照明工程总体专家组专家等。至今已经发表超过150篇相关论文及会议报告。 

联系地址：山东济南山大南路27号山东大学晶体材料研究所

邮箱：xxu@sdu.edu.cn

办公电话：0086-（0）531-88366329 

Prof. Dr. Xiangang Xu

Prof. Dr. Xiangang Xu was born in January 1965 in Shandong Province, China. He studied under academician Jiang Minhua and received the Ph. D. in condensed matter on semiconductor materials from Shandong University in 1992. He has been the Distinguished Professor of Ministry of Education of Changjiang Scholars, and a chief scientist of 973 Program since he returned from the US in 2000. He is mainly engaged in the research of semiconductor materials, nano-materials, and device applications.

Since 1989, Dr. Xu has been working on the growth and device applications of MOCVD compound semiconductor thin film materials, including As-, P-, Sb- and N-containing materials. He prepared a variety of quantum heterostructure materials such as quantum wells, superlattices, 2DEG and various thin film materials such as AlGaAs, AlGaInP, InGaAsP, AlInGaN, GaAsSb, and InGaSb, which has been applied to semiconductor devices such as semiconductor lasers, Light-emitting diodes, HBT, HEMT, etc. Since 2000, he began to grow and process SiC single crystals. He broke through 2-6 inch 6H-SiC and 4H-SiC single crystal growth technologies, solved the processing problem of superhard SiC single crystal substrates, and produced GaN ultra high brightness Light-emitting diode based on SiC substrate. He has undertaken 863 Program, 973 Program and other National Basic Research Program and so on. Recently, he has carried out the preparations and application of nano-materials.

Dr. Xu was awarded various prestigious fellowship, awards and honors, including the Alexander von Humboldt fellow in 1995, the Electronics Letters Premium by IEE, UK in 1998, the Outstanding Paper Award of 21^st IEEE GaAs IC Symposium, USA in 1999, the winner of National Science Funds for Outstanding Young Scholars in 2000, the first prize of Scientific and Technological progress in Shandong Province and Returned overseas students Enterpreneurship Award in Shandong Province in 2003, the Ten Outstanding Young Persons in Shandong Province in 2005, the government special allowance award in 2007, the First Prize of Technological Invention in Shandong Province in 2014. He is a member of the State Council’s degree committee and an expert on the overall group of semiconductor lighting progects of the National 863 Program. To date, he has published more than 150 papers and conference presentations.

Prof. Dr. Xiangang Xu  

Institute of Crystal Materials,  

Shandong University,Jinan, 250100,China  

xxu@sdu.edu.cn

Tel: 0086-531-88366329(O)